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| E2P0031-37-X2 PHOTOSENSORS This version: Jan. 1998 Previous version: May. 1997 T55L electronic components T55L Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package. FEATURES * Silicon planar technology applied in design allows detection of microscopic amounts of light * Internal amplification provides high sensitivity * TO-18 package for ease of handling APPLICATIONS * For photoelectric transducer, switching, logic circuits and miniaturization IN CONFIGURATION (Unit: mm) 5.8 max. 3.6 13.51 f5.50.3 f4.60.1 2.54 2 1 f0.45 45 * Pin Connection Diagram 2 1 1: Emitter 2: Collector 1. 1. 0 0 1/5 PHOTOSENSORS T55L ABSOLUTE MAXIMUM RATINGS Parameter Collector-emitter Voltage Emitter-collector Voltage Collector Current Power Dissipation Power Dissipation Derating Factor *1 Symbol VCEO VECO IC PC PC/C Topr Tstg Test Condition Rating 20 5 20 150 2.0 Unit V V mA mW mW/C C C Ta=25C Operating Temperature Storage Temperature -- -- -40 to +100 -55 to +125 *1 Allowable power dissipation derating factor at Ta25C ELECTRICAL CHARACTERISTICS Parameter Collector-emitter Breakdown Voltage Emitter-collector Breakdown Voltage Dark Current Photocurrent Collector-emitter Saturation Voltage Symbol BVCEO BVECO ID IL VCE (sat) Test Condition IC=500 mA IE=10 mA VCE=10 V, 0 R X VCE=10 V Standard Illuminant A =100 R X VCE=10 V Standard Illuminant A = 500 R X (Ambient Temperature Ta=25C) Min. 20 5 -- 0.5 -- Typ. -- -- -- -- 0.25 Max. -- -- 100 -- 0.4 Unit V V nA mA V 2/5 PHOTOSENSORS T55L TYPICAL CHARACTERISTICS * Directional Characteristics 100 * Photocurrent vs. Ambient Temperature 400 VCE=10 V Percentage of Photocurrent at 25C (%) Relative Sensitivity (%) 300 50 200 100 -30 -20 -10 0 10 20 30 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Directional Angle (deg) Ambient Temperature Ta (C) * Dark Current vs. Ambient Temperature 104 VCE=10 V 103 * Spectral Sensitivity (Ta=25C) 1 0.5 Dark Current ID (nA) 102 Relative Sensitivity 0.2 10 0.1 0.05 1 0.02 10-1 0.01 300 400 500 600 700 800 900 1000 1100 10-2 -40 -20 0 20 40 60 80 100 Wavelength l (nm) Ambient Temperature Ta (C) 3/5 PHOTOSENSORS * Photocurrent vs. Illuminance (Ta=25C) T55L * Rise Time, Fall Time vs. Load Resistance (Ta=25C) 100 10 VCE=10 V 8 Photocurrent IL (mA) Rise Time, Fall Time tr, tf (ms) tr tf 10 6 4 2 1 0 0 200 400 600 800 1000 0.1 0.01 Illuminance (R ) X 0.1 1 10 Load Resistance RL (W) * Note (1) Switching Time Measuring Circuit LED (tr=100 ns) (tf=130 ns) Pulse Oscillator VCE=10 V 50W Output (2) Rise Time (tr), Fall Time (tf) T55L Output Pulse 90% 10% tr tf 4/5 PHOTOSENSORS * Photocurrent vs. Voltage (Ta=25C) T55L * Dark Current vs. Voltage (Ta=25C) 50 8 40 Photocurrent IL (mA) 6 500R X Dark Current ID (nA) 30 4 300R X 2 0 0 5 10 15 20 20 100R X 10 10 0 5 10 15 20 Voltage VCE (V) Voltage VCE (V) 5/5 |
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